Condensed Matter Experiment Ⅰ

Thin Films and Heterointerfaces Research Group


Professor : Atsushi Tsukazaki
Associate Professor : Kohei Fujiwara
Assistant Professor : Motoki Osada Tsukasa Terada


The research subject in this division is a further development of functionalities at the solid interfaces.  In particular, we aim to discover a novel function at the well-regulated and abrupt interfaces prepared by our thin film growth techniques.  Combining the growth technique and electrostatic doping method enable us to make highly mobile and quantum transport channels at the solid interfaces.  Now, we try to expand these techniques to develop the potential for various materials and interfaces for future advancement in condensed matter physics.

Figure 1 Growth chamber based on molecular-beam epitaxy(left) and Hall-bar device and transparent oxide semiconductor film (right).

Figure 2 Electric-field-induced superconductivity in ultrathin FeSe film. The inset shows electric-double-layer transistor configuration.
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